Diffused resistor model under ESD stress in linear, saturation, multiplication and snapback, and secondary breakdown regions was analyzed. 对ESD应力下扩散电阻的四个区域:线性区、饱和区、雪崩倍增和负微分电阻区、二次击穿区的模型进行了分析。
Latent damage in n-well diffused resistor under ESD stress ESD应力下n阱扩散电阻的潜在损伤
The experimental results of dual emitter ballasting using a complex emitter ballasting resistor which is provided by a diffused silicon resistor and a poly silicon resistor in silicon microwave power transistor are reported. 本文报道了采用多晶硅电阻和扩散电阻组合而成的复合镇流电阻对硅微波功率器件进行二次发射极镇流的实验结果。
In addition, this paper describes the photocurrent effect and the conductivity modulation effect on diffused resistor s as well as the model in which the diffused resistor varies with γ radiation rate. 论述了扩散电阻的光电流效应和电导调制效应,以及扩散电阻随γ剂量率变化的模型。